· 将在年内向客户供应最高性能、最大容量的12层HBM3E
· 与上一代相较单一DRAM芯片薄40%，维持相同的整体厚度的同时，其容量却提高了50%
· “将以压倒性的产品性能和竞争力延续HBM的成功故事”
2024年9月26日，SK海力士宣布，公司全球率先开始量产12层HBM3E新品，实现了现有HBM*产品中最大**的36GB（千兆字节）容量。
公司将在年内向客户提供产品，继今年3月全球率先向客户供应8层HBM3E后，仅时隔6个月再次展现出其压倒性的技术实力。
SK海力士强调:“自2013年全球首次推出第一代HBM(HBM1)至第五代HBM(HBM3E)， 公司是唯一一家开发并向市场供应全系列HBM产品的企业。公司业界率先成功量产12层堆叠产品，不仅满足了人工智能企业日益发展的需求，同时也进一步巩固了SK海力士在面向AI的存储器市场的lingdaozhe地位。”
公司又表示，12层HBM3E在面向AI的存储器所需要的速度、容量、稳定性等所有方面都已达到全球最高水平。
SK海力士将此新产品的运行速度提高至现有内存的最高速度9.6Gbps，其是在以搭载四个HBM的单个GPU运行大型语言模型（LLM）‘Llama 3 70B*’时，每秒可读取35次700亿个整体参数的水平。
公司还堆叠12颗3GB DRAM芯片，实现与现有的8层产品相同的厚度，同时容量提升50%。为此，公司将单个DRAM芯片制造得比以前薄40%，并采用硅通孔技术*（TSV）技术垂直堆叠。
此外，SK海力士也解决了在将变薄的芯片堆叠至更高时产生的结构性问题。公司将其核心技术先进MR-MUF**工艺应用到此次产品中，放热性能较上前一代提升了10%，并增强了控制翘曲问题，从而确保了稳定性和可靠性。
SK海力士AI Infra担当金柱善社长表示：“我们再次突破了技术壁垒，证明了我们在面向AI的存储器市场中duyiwuer的主导地位。为了迎接AI时代的挑战，我们将稳步准备下一代存储器产品，以巩固‘全球dingji面向AI的存储器供应商’的地位。”
*高带宽存储器(HBM, High Bandwidth Memory): 一种高附加值、高性能存储器。与现有的DRAM产品相比，通过垂直互联多个DRAM芯片，使数据处理速度显著提高。该产品按照HBM第1代（HBM）-第2代（HBM2）-第3代（HBM2E）-第4代（HBM3）-第5代（HBM3E）的顺序开发，HBM3E是HBM3的扩展版
**现有的HBM3E最大容量为24GB，由8颗3GB DRAM芯片垂直堆叠而成
*Llama 3：Meta于2024年4月推出的开源大型语言模型，其提供8B（十亿）、70B、400B的三种规模
*硅通孔技术（TSV，Through Silicon Via）：一种在DRAM芯片上打数千个微孔使其垂直互连至电极的先进封装（Advanced Packaging）技术。
**批量回流底部模制填充（MR-MUF，Mass Reflow Molded Underfill）： 在堆叠半导体芯片后，为了保护芯片间的电路，在其中填充液体保护材料，使其固化。有评价称，与每堆一个芯片就铺设薄膜型材料的方式相比，该技术提高了效率和散热效果。特别是SK海力士的先进MR-MUF技术，较现有技术减少了芯片堆叠时所施加的压力，提高了芯片的翘曲控制力(Warpage Control)，这是确保HBM稳定量产的关键。
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