参数测试项目
1DraintoSourceBreakdownVoltage漏极-源极击穿电压
2DrainLeakageCurrent漏极漏电流
3GateLeakageCurrent(Positivegatebias)栅极漏电流(正向栅偏)
4GateLeakageCurrent(Negativegatebias)栅极漏电流(反向栅偏)
5GateThresholdVoltage(VGS=VDS)栅极阈值电压(VGS=VDS)
6GateThresholdVoltage(ConstantVDS)栅极阈值电压(恒定VDS)
7Transconductance跨导
8DraintoSourceOnResistance漏极-源极导通电阻
9DraintoSourceOnVoltage漏极-源极导通电压
10BodyDiodeForwardVoltage体二极管正向电压
11InternalGateResistance栅极内阻
12InputCapacitance输入电容
13OutputCapacitance输出电容
14ReverseTransferCapacitance反向传输电容
15TotalGateCharge栅极电荷
16GatetoSourceCharge栅极-源极电荷
17GatetoDrainCharge栅极-漏极电荷
18GatetoSourcePlateauVoltage栅极-源极平台电压
19Turn-OnDelayTime开通延迟时间
20RiseTime上升时间
21Turn-OffDelayTime关断延迟时间
22FallTime下降时间
23Turn-onenergy开通能量
24Turn-offenergy关断能量
25ReverseRecoveryTime反向恢复时间
26ReverseRecoveryCharge反向恢复电荷
27ReverseRecoveryCurrent反向恢复电流
28PeakDiodeRecovery二极管反向恢复峰值
29ID-VDScurvewithvariousVGS不同VGS下的ID-VDS曲线
30ID-VGScurvewithconstantVDS恒定VDS下的ID-VGS曲线
31Gfs-VGScurvewithconstantVDS恒定VDS下的Gfs-VGS曲线
32RDS(on)-IDcurvewithvariousVGS不同VGS下的RDS(on)-ID曲线
33RDS(on)-VGScurvewithvariousID不同ID下的RDS(on)-VGS曲线
34VDS-VGScurvewithvariousID不同ID下的VDS-VGS曲线
35Forwardcurrentcharacteristicsofbuilt-indiode内置二极管的IS-VS曲线
36CapacitancetoVDScurveincludingCiss,CossandCrssCiss/Coss/Crss电容-VDS曲线
37GatechargetoVGScurve栅极电荷-VGS曲线
38short-circuitcapability短路耐量
39thermalresistance,junction-case结-壳热阻
可靠性试验项目
1ExternalVisual外观检查
2HighTemperatureReverseBias高温反向偏压
3HighTemperatureGateBias高温栅极偏压
4Thermalshocktest热冲击
5Vibration振动
6Mechanicalshock机械冲击
7UnbiasedHighlyAcceleratedStressTest无偏高加速应力试验
8Autoclave高压釜试验
9HighlyAcceleratedStressTest高加速应力试验
10HighHumidityHighTemp.ReverseBias高温高湿反向偏压
11High-temperaturestorage高温存储
12Low-temperaturestorage低温存储
13Insulationtest绝缘测试
14Powercycling功率循环
15Powercycle功率循环
16ESDCharacterizationEDS特性
17DestructivePhysicalAnalysis破坏性物理分析
18PhysicalDimension物理尺寸
19ResistancetoSolderHeat焊接热耐久性
20Solderability可焊性
21ThermalResistance热阻
22WireBondStrength引线键合强度
23BondShear键合剪切试验
24DieShear芯片剪切试验
25DielectricIntegrity介电强度试验